%0 Journal Article
%4 sid.inpe.br/mtc-m21b/2017/04.19.15.11
%2 sid.inpe.br/mtc-m21b/2017/04.19.15.11.50
%@doi 10.1107/S1600576717000760
%@issn 0021-8898
%T Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis
%D 2017
%9 journal article
%A Morelhão, S. L.,
%A Fornari, Celso Israel,
%A Rappl, Paulo Henrique de Oliveira,
%A Abramof, Eduardo,
%@affiliation Universidade de São Paulo (USP)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@electronicmailaddress
%@electronicmailaddress celso.fornari@inpe.br
%@electronicmailaddress paulo.rappl@inpe.br
%@electronicmailaddress eduardo.abramof@inpe.br
%B Journal of Applied Crystallography
%V 50
%P 399-410
%K bismuth telluride, model structure simulation, nanostructured domains, three-dimensional reciprocal-space maps, X ray diffraction.
%X The surface properties of topological insulators are strongly correlated with their structural properties, requiring high-resolution techniques capable of probing both surface and bulk structures at once. In this work, the high flux of a synchrotron source, a set of recursive equations for fast X-ray dynamical diffraction simulation and a genetic algorithm for data fitting are combined to reveal the detailed structure of bismuth telluride epitaxial films with thicknesses ranging from 8 to 168 nm. This includes stacking sequences, thickness and composition of layers in model structures, interface coherence, surface termination, and morphology. The results are in agreement with the surface morphology determined by atomic force microscopy. Moreover, by using X-ray data from a zero-noise area detector to construct three-dimensional reciprocal-space maps, insights into the nanostructure of the domains and stacking faults in Bi2Te3 films are given.
%@language en